Demonstration of gating action in atomic
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Frank J. Rueß; Giordano Scappucci; Martin Füchsle; Wilson Pok; Andreas Fuhrer; D
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Article
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2008
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Elsevier Science
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English
⚖ 774 KB
We study the low temperature electrical characteristics of planar, highly phosphorus-doped nanodots. The dots are defined by lithographically patterning an atomically flat, hydrogenated Si(1 0 0):H surface using a scanning-tunneling-microscope (STM), phosphorus d-doping and low temperature molecular