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Evaluation of zinc interstitial in Si-ion implanted ZnO bulk single crystals by a Rutherford backscattering study: An origin of low resistivity

✍ Scribed by Y. Izawa; K. Matsumoto; K. Kuriyama; K. Kushida


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
417 KB
Volume
268
Category
Article
ISSN
0168-583X

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