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Scaling and the metal-insulator transition in Si/SiGe quantum wells

✍ Scribed by Lam, J.; D’Iorio, M.; Brown, D.; Lafontaine, H.

Book ID
120819128
Publisher
The American Physical Society
Year
1997
Tongue
English
Weight
75 KB
Volume
56
Category
Article
ISSN
1098-0121

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📜 SIMILAR VOLUMES

Evidence for a metal–insulator transitio
Evidence for a metal–insulator transition atB = 0 in Si/SiGe/Si quantum wells
✍ M. D'iorio; D. Brown; J. Lam; D. Stewart; S. Deblois; H. Lafontaine 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 71 KB

The temperature dependence of the resistivity of gated Si-SiGe quantum-well structures has revealed a metal-insulator transition as a function of carrier density at zero magnetic field. Although early scaling theories have argued against the existence of a metal-insulator transition at zero temperat