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Scaling behavior of metal–insulator transitions in a Si/SiGe two dimensional hole gas

✍ Scribed by C. Possanzini; L. Ponomarenko; D. de Lang; A. de Visser; S.M. Olsthoorn; R. Fletcher; Y. Feng; P.T. Coleridge; R.L. Williams; J.C. Maan

No coin nor oath required. For personal study only.

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