𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice-matched to (001) InP Substrates

✍ Scribed by Dr. V. Gottschalch; Dr. G. Knobloch; Prof.-Dr. E. Butter

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
354 KB
Volume
26
Category
Article
ISSN
0232-1300

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Raman characterization of SiNx depositio
Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate
✍ B. Boudart; C. Gaquière; M. Constant; A. Lorriaux; N. Lefebvre 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 93 KB

Effects of SiN x deposition on undoped Ga 0.47 In 0.53 As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga 0.47 In 0.53 As material, whatever the thickness and the temperat