One more deep level related to the metas
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O.A. Soltanovich; E.B. Yakimov; E.V. Erofeev; V.A. Kagadei; J. Weber
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Article
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2009
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Elsevier Science
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English
โ 236 KB
A deep trap with energy level at E C -0.45 eV is detected in n-type GaAs epilayers after hydrogenation. This level exhibits a bias-dependent annealing behaviour in the temperature range 290-400 K. The relation of this defect to the well-known metastable hydrogen-related M3/M4 defect is discussed.