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Ruthenium gate electrodes on SiO[sub 2] and HfO[sub 2]: Sensitivity to hydrogen and oxygen ambients

✍ Scribed by L. Pantisano; T. Schram; Z. Li; J. G. Lisoni; G. Pourtois; S. De Gendt; D. P. Brunco; A. Akheyar; V. V. Afanas’ev; S. Shamuilia; A. Stesmans

Book ID: 124158865
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 528 KB
Volume: 88
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2212288

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