[IEEE International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA (12-16 May 2003)] International Conference onIndium Phosphide and Related Materials, 2003. - Damage-free SiO/sub 2//SiN/sub x/ side-wall gate process and its application to 40 nm InGaAs/InAlAs HEMT's with 65% InGaAs channel

✍ Scribed by Dae-Hyun Kim, ; Suk-Jin Kim, ; Young-Ho Kim, ; Kwang-Seok Seo,

• Book ID: 121083331
• Publisher: IEEE
• Year: 2003
• Weight: 261 KB
• Category: Article
• ISBN-13: 9780780377042
• DOI: 10.1109/ICIPRM.2003.1205312