Carbon concentration in semi-insulating GaAs crystals is a significant parameter which determines the resistivity, one of the most essential properties of GaAs. Consequently, the precise measurement of the carbon concentration is a key technique for the manufacturing of GaAs crystals in good reprodu
Round-robin test for flatness measurement of GaAs wafers
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 418 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0961-1290
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β¦ Synopsis
Part II1: LTV and PLTV I Due to increasing market demands for GaAs substrates worldwide, improvements in physical characteristics such as warp, flatness, local thickness variation (LTV) and other parameters are required. III-Vs Review concludes its three-part series covering the round-robin testing of GaAs wafers by Japanese substrate suppliers. In this article we cover local thickness variation (LTV) and percentage local thickness variation (PLTV). Preceding articles covered warp and bow [1 ] and total thickness variation and total indicated reading [2].
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