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Roughness induced at Si(111) surfaces by high temperature heating

✍ Scribed by Y. Borensztein; T. Lopez-Rios; G. Vuye


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
304 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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Pd was deposited on clean Si surfaces at about 680 K in an ultrahigh-vacuum transmission electron microscope. The Ε½ . direct formation process of Pd Si islands on Si 111 surfaces was observed in situ by high-resolution transmission electron 2 Ε½ . microscopy in a cross-sectional view. At a low deposi