In situ UHV-TEM observation of the direct formation of Pd2Si islands on Si(111) surfaces at high temperature

✍ Scribed by Masaki Takeguchi; Yuan Wu; Miyoko Tanaka; Kazuo Furuya

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 498 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00076-3

✦ Synopsis

Pd was deposited on clean Si surfaces at about 680 K in an ultrahigh-vacuum transmission electron microscope. The Ž . direct formation process of Pd Si islands on Si 111 surfaces was observed in situ by high-resolution transmission electron 2 Ž . microscopy in a cross-sectional view. At a low deposition amount, Si 111 7 = 7 surfaces were transformed to a new layer due to the coverage by Pd. With further deposition, Pd Si islands appeared on Si surfaces. Some Pd Si islands were single 2 2

Ž . crystals and grew epitaxially on Si 111 surfaces in the Stranski-Krastanow mode. After stopping Pd deposition, the surface of the Pd Si islands exhibited a reconstruction structure with threefold periodicity, which consists of two atomic layers. 2