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Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition

✍ Scribed by R. Schütz; J. Murota; T. Maeda; R. Kircher; K. Yokoo; S. Ono; H.L. Hartnagel


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
568 KB
Volume
222
Category
Article
ISSN
0040-6090

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