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Role of the initial growth mode on the dislocation structure in MBE grown ZnSe/GaAs(100)

✍ Scribed by S. Guha; H. Munekata; L.L. Chang; W.C. Tang

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
606 KB
Volume
127
Category
Article
ISSN
0022-0248

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✍ M. Sc. J. Sadowski; Dr. E. Dynowska; Dr. K. RegiΕ„ski; Prof. M. A. Herman πŸ“‚ Article πŸ“… 1993 πŸ› John Wiley and Sons 🌐 English βš– 641 KB

## Abstract The MBE growth of PbTe layers on GaAs (100) 2Β° off‐oriented substrates belongs to hard heteroepitaxy, because the two materials differ strongly in their lattice constants and, in addition, they also exhibit different crystal structures. Consequently, phases with different surface orient