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Role of new ohmic electrode metallization in detection performance of bulk semi-insulating GaAs radiation detectors

✍ Scribed by Pavol Boháček; Bohumír Zat’ko; František Dubecký; Štefan Chromík; Jozef Huran; Mária Sekáčová

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
337 KB
Volume
591
Category
Article
ISSN
0168-9002

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✦ Synopsis

In this work, we concentrate on the study of the role of ohmic electrode metallization of radiation imaging detectors based on bulk semi-insulating (SI) GaAs. We fabricated SI GaAs radiation detectors with Ti/Pt/Au Schottky contact on one side and In/Au, Mg/Au and Gd/Au contacts on the other side of bulk material with the aim to form hole barrier Schottky contact with non-injecting effect. Current-voltage and noise characteristics and also detection performance of detectors are measured and evaluated. Observed results are discussed and compared with detector using standard AuGeNi non-alloyed ohmic metallization.

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