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A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics

✍ Scribed by František Dubecký; Bohumír Zaťko; Pavel Hubík; Enos Gombia; Pavol Boháček; Jozef Huran; M. Sekáčová


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
283 KB
Volume
607
Category
Article
ISSN
0168-9002

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In this work, we concentrate on the study of the role of ohmic electrode metallization of radiation imaging detectors based on bulk semi-insulating (SI) GaAs. We fabricated SI GaAs radiation detectors with Ti/Pt/Au Schottky contact on one side and In/Au, Mg/Au and Gd/Au contacts on the other side of