In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is presented. The detectors fabricated from ''detector-grade'' bulk SI GaAs are characterized by current-voltage measurements and their detecti
Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base materials
✍ Scribed by František Dubecký; Claudio Ferrari; Dušan Korytár; Enos Gombia; Vladimír Nečas
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 435 KB
- Volume
- 576
- Category
- Article
- ISSN
- 0168-9002
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
In this work, we concentrate on the study of the role of ohmic electrode metallization of radiation imaging detectors based on bulk semi-insulating (SI) GaAs. We fabricated SI GaAs radiation detectors with Ti/Pt/Au Schottky contact on one side and In/Au, Mg/Au and Gd/Au contacts on the other side of
A preliminary study of technology and performance of radiation detectors based on bulk semi-insulating (SI) GaAs with P + blocking electrodes is presented. Detectors with blocking electrode system formed either by P + (GaAs)/N-(SI GaAs) homojunction or P + (Al 0.3 Ga 0.7 As)/N-(SI GaAs) heterojuncti