On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs
✍ Scribed by B. Zaťko; F. Dubecký; P. Boháček; E. Gombia; P. Frigeri; R. Mosca; S. Franchi; J. Huran; V. Nečas; M. Sekáčová; A. Förster; P. Kordoš
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 332 KB
- Volume
- 531
- Category
- Article
- ISSN
- 0168-9002
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A preliminary study of technology and performance of radiation detectors based on bulk semi-insulating (SI) GaAs with P + blocking electrodes is presented. Detectors with blocking electrode system formed either by P + (GaAs)/N-(SI GaAs) homojunction or P + (Al 0.3 Ga 0.7 As)/N-(SI GaAs) heterojuncti
In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is presented. The detectors fabricated from ''detector-grade'' bulk SI GaAs are characterized by current-voltage measurements and their detecti