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Role of localized interface states at type-II heterojunctions

✍ Scribed by Priester, C.; Foulon, Y.; Allan, G.


Book ID
121663355
Publisher
The American Physical Society
Year
1994
Tongue
English
Weight
211 KB
Volume
49
Category
Article
ISSN
1098-0121

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Electron channel with high carrier mobil
✍ M.P. Mikhailova; T.I. Voronina; T.S. Lagunova; K.D. Moiseev; S.A. Obukhov; A.E. πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 81 KB

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga 1-x In x AsSb/ p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures.