Comparative study of growth kinetics of the Al x Ga 1À x N (x¼0-1) layers grown by plasma-assisted molecular beam epitaxy (PA MBE) under different growth conditions (group III to activated nitrogen and Al to Ga flux ratios) is presented. The strong influence of elastic stress on the surface morpholo
Role of interface strain in atomic layer epitaxy growth kinetics of InxGa1−xAs
✍ Scribed by Y. Sakuma; M. Ozeki; K. Kodama; N. Ohtsuka
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 536 KB
- Volume
- 114
- Category
- Article
- ISSN
- 0022-0248
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