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Growth and characterization of In0.53Ga0.47As/InxGa1−xAs strained-layer superlattices

✍ Scribed by A. Kohl; S. Juillaguet; B. Fraisse; R. Schwedler; F. Royo; H. Peyre; F. Bruggeman; K. Wolter; K. Leo; H. Kurz; J. Camassel

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 408 KB
Volume: 21
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(93)90358-t

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✦ Synopsis

Since the early proposal that InGaAs/lnGaAs strained-layer superlattices (SLSs) should constitute a new class of optoelectronic materials, very little work has been done to master the growth conditions and optimize the resulting superlattice properties. In this work, we present the results of a preliminary investigation of SLSs grown by low-pressure metal-organic vapour phase epitaxy. Two different series of samples were grown to check independently the effect of well thickness and barrier composition. In both cases, in order to conserve one layer nominally lattice-matched to InP, the wells had a standard composition In053Ga047As.

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