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Role of free carriers in the application of optically detected magnetic resonance for studies of defects in silicon

✍ Scribed by W. M. Chen; B. Monemar

Book ID
104721983
Publisher
Springer
Year
1991
Tongue
English
Weight
613 KB
Volume
53
Category
Article
ISSN
1432-0630

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Optically detected magnetic resonance of excitons and carriers in GaAsAlAs superlattices
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Optically detected magnetic resonance (ODMR) of electrons, holes and heavy-hole-excitons has been studied in GaAs/AlAs superlattices in the range of periods from 22 A to 75 A. The spectral dependence of the ODMR and of the exciton level anticrossing signals have been measured. The variation of the e