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Rigorous modeling approach to numerical simulation of SiGe HBTs

✍ Scribed by V Palankovski; G Röhrer; T Grasser; S Smirnov; H Kosina; S Selberherr

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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Numerical simulation of strained Si/SiGe

✍ B. Meinerzhagen; C. Jungemann; B. Neinhüs; M. Bartels 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 272 KB

Rigorous and simplified approach to the

✍ G. Spadoni; C. Stramigioli; F. Santarelli 📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 653 KB

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✍ A.A. Shcherbakov; A.V. Tishchenko; D.S. Setz; B.C. Krummacher 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 533 KB

A rigorous kinetic approach to model pri

✍ C. Minero 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 566 KB

Inversion charge modeling of SiGe PMOS a

✍ G.F. Niu; G. Ruan; T.A. Tang 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 509 KB