Impact of Ge content on the gate oxide r
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Suresh Uppal; Mehdi Kanoun; John B. Varzgar; Sanatan Chattopadhyay; Sarah Olsen;
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Article
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2006
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Elsevier Science
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English
⚖ 307 KB
In this paper we study the impact of the variation of Ge content on the gate oxide reliability of strained-Si/SiGe (s-Si/SiGe) MOS devices. MOS capacitors and n-MOSFET devices were fabricated on Si, and strained Si grown on SiGe virtual substrates with a Ge content of 10 and 30%. The devices had pol