✦ LIBER ✦
Inversion charge modeling of SiGe PMOS and approaches to increasing the hole density in the SiGe channel
✍ Scribed by G.F. Niu; G. Ruan; T.A. Tang
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 509 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1101
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