๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

RF electro-thermal modeling of LDMOSFETs for power-amplifier design

โœ Scribed by Akhtar, S.; Roblin, P.; Sunyoung Lee; Xiaohui Ding; Shuang Yu; Kasick, J.; Strahler, J.

Book ID
114659546
Publisher
IEEE
Year
2002
Tongue
English
Weight
419 KB
Volume
50
Category
Article
ISSN
0018-9480

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

On design of linear RF power amplifier f
On design of linear RF power amplifier for CDMA signals
โœ Qiang Wu; Martina Testa; Robert Larkin ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 160 KB ๐Ÿ‘ 2 views

In this paper, we analyze the nonlinear effect of an RF power amplifier on CDMA signals and then derive the direct relation between the power transistor's traditional ( ) nonlinearity parameter, the third order intermodulation coefficient IP , and an estimate 3 [ ] of the out-of-band emission levels

Large-signal modeling methodology for Ga
Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design
โœ Anwar Jarndal; Pouya Aflaki; Renato Negra; Ammar B. Kouki; Fadhel M. Ghannouchi ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 466 KB

A large-signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The