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A new empirical large-signal model of Si LDMOSFETs for high-power amplifier design

✍ Scribed by Youngoo Yang; Young Yun Woo; Jaehyok Yi; Bumman Kim


Book ID
114554165
Publisher
IEEE
Year
2001
Tongue
English
Weight
222 KB
Volume
49
Category
Article
ISSN
0018-9480

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πŸ“œ SIMILAR VOLUMES


A new instantaneous model of MESFET and
✍ Maurizio Cicolani; Alberto Di Martino; Silvio D'Innocenzo; Stefano Pisa; Pasqual πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 192 KB

## Abstract A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__‐band hybrid amplifier. Excellent agreement between measurements and simulated p