𝔖 Bobbio Scriptorium
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RF circuit design aspects of spiral inductors on silicon

✍ Scribed by Burghartz, J.N.; Edelstein, D.C.; Soyuer, M.; Ainspan, H.A.; Jenkins, K.A.


Book ID
119775199
Publisher
IEEE
Year
1998
Tongue
English
Weight
243 KB
Volume
33
Category
Article
ISSN
0018-9200

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## Abstract A two‐state single turn spiral inductor design is simulated in a 130 nm technology and another design is simulated and measured in a 45 nm technology. Measurements show an 80% inductance increase at 20 GHz in the 45 nm technology and a simulated 76% increase at 24 GHz in the 130 nm tech