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An on-chip two-state single-turn spiral inductor for reconfigurable RF circuit designs

✍ Scribed by Wayne Woods; Hanyi Ding; Guoan Wang; Essam Mina


Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
377 KB
Volume
52
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

A two‐state single turn spiral inductor design is simulated in a 130 nm technology and another design is simulated and measured in a 45 nm technology. Measurements show an 80% inductance increase at 20 GHz in the 45 nm technology and a simulated 76% increase at 24 GHz in the 130 nm technology. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 673–677, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24985