On the design of RF spiral inductors on silicon
β Scribed by Burghartz, J.N.; Rejaei, B.
- Book ID
- 114617020
- Publisher
- IEEE
- Year
- 2003
- Tongue
- English
- Weight
- 977 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The viable multiconductor spiral inductor designs on the silicon substrate with effective broadband shielding are presented. The synthetic edgeβcoupled transmission line (TL), which is operated in the even mode, is applied to realize the spiral inductor and provide the mesh ground shiel
## Abstract A twoβstate single turn spiral inductor design is simulated in a 130 nm technology and another design is simulated and measured in a 45 nm technology. Measurements show an 80% inductance increase at 20 GHz in the 45 nm technology and a simulated 76% increase at 24 GHz in the 130 nm tech