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Reverse annealing effects in heavy ion implanted silicon

✍ Scribed by Paolo Pellegrino; Niclas Keskitalo; Anders Hallén; Bengt G Svensson

Book ID
114170715
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
132 KB
Volume
148
Category
Article
ISSN
0168-583X

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✍ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron