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RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

✍ Scribed by Zhang, Yuantao; Dong, Xin; Li, Guoxing; Li, Wancheng; Zhang, Baolin; Du, Guotong


Book ID
120051305
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
739 KB
Volume
366
Category
Article
ISSN
0022-0248

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