We report the observation of resonant tunneling and magneto-tunneling between states of different effective mass derived from zone centre ( ) and zone edge (X ) points of the Brillouin zone in single AlAs barrier diodes. The nature of the X states involved (longitudinal X z or transverse X xy ) is d
✦ LIBER ✦
Resonant Γ-Xtunneling in single-barrier GaAs/AlAs/GaAs heterostructures
✍ Scribed by Yu. N. Khanin; E. E. Vdovin; Yu. V. Dubrovskii
- Book ID
- 110138669
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 178 KB
- Volume
- 38
- Category
- Article
- ISSN
- 1063-7826
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Our paper is a ÿrst step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I -V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers -doped with silicon in the middle of AlAs layer. At 4:2 K and magnetic ÿeld up to 6 T we resolv