Resonant tunneling single electron transistors
โ Scribed by S. Tarucha; D.G. Austing; T. Honda
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 277 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
We systematically estimate the resonant tunneling transit time from the high-frequency characteristics of resonant tunneling transistors. It is found that the transit time across an InGaAs/InAlAs resonant tunneling structure is more than one order of magnitude shorter than that for \(\mathrm{GaAs} /
A resistively coupled single-electron transistor (R-SET) was fabricated using a modulationdoped heterostructure and metal Schottky gates, and measured at low temperature. Currents of R-SET with tunnel gate resistor were calculated using the orthodox theory. It is shown that the R-SET with tunnel gat