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Resistively coupled single-electron transistor using tunnel gate resistor

✍ Scribed by Fujio Wakaya; Shinya Nakamichi; Shunji Mandai; Shuichi Iwabuchi; Kenji Gamo


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
263 KB
Volume
27
Category
Article
ISSN
0749-6036

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✦ Synopsis


A resistively coupled single-electron transistor (R-SET) was fabricated using a modulationdoped heterostructure and metal Schottky gates, and measured at low temperature. Currents of R-SET with tunnel gate resistor were calculated using the orthodox theory. It is shown that the R-SET with tunnel gate resistor has quite similar properties to the originally proposed R-SET.