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Resonant tunneling in polytype InAs/AlSb/GaSb heterostructures

✍ Scribed by K.F. Longenbach; L.F. Luo; S. Xin; W.I. Wang


Book ID
107791873
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
667 KB
Volume
111
Category
Article
ISSN
0022-0248

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Study of Stark effect in AlSb/GaSb/InAs/
✍ Y.W. Chen; H.S. Li; K.L. Wang πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 161 KB

A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum