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Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells

✍ Scribed by Iwamoto, S.; Kageshima, H.; Yuasa, T.; Nishioka, M.; Someya, T.; Arakawa, Y.; Fukutani, K.; Shimura, T.; Kuroda, K.

Book ID
115423438
Publisher
Optical Society of America
Year
1999
Tongue
English
Weight
304 KB
Volume
24
Category
Article
ISSN
0146-9592

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Strain effects on carrier lifetimes in I
Strain effects on carrier lifetimes in InGaAs/(Al)GaAs multiple quantum wells
✍ M.H. Moloney; J. Hegarty; L. Buydens; P. Demeester; R. Grey; J. Woodhead πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 379 KB

Lifetimes were measured in several InGaAs/(Al)GaAs samples with various levels of strain and strain relief, with thick barriers and with GaAs barriers. Lifetimes of the order of 0.5 ns were measured. We have found that the introduction of indium, to obtain InGaAs wells, causes a dramatic decrease in