𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Charge accumulation effects in InGaAs/GaAs [111]-oriented piezoelectric multiple quantum wells

✍ Scribed by J.L. Sánchez-Rojas; A. Sacedón; J.F. Vlaltueña; A. Sanz-Hervás; I. Izpura; E. Calleja; E. Muñoz; E.J. Abril; M. Aguilar

Book ID
108361549
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
596 KB
Volume
28
Category
Article
ISSN
0026-2692

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strain effects on carrier lifetimes in I
Strain effects on carrier lifetimes in InGaAs/(Al)GaAs multiple quantum wells
✍ M.H. Moloney; J. Hegarty; L. Buydens; P. Demeester; R. Grey; J. Woodhead 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 379 KB

Lifetimes were measured in several InGaAs/(Al)GaAs samples with various levels of strain and strain relief, with thick barriers and with GaAs barriers. Lifetimes of the order of 0.5 ns were measured. We have found that the introduction of indium, to obtain InGaAs wells, causes a dramatic decrease in

Optical investigation of piezoelectric f
Optical investigation of piezoelectric field effects on excitonic properties in (111)B-grown (In, Ga)As/GaAs quantum wells
✍ P. Ballet; P. Disseix; A. Vasson; A.-. Vasson; R. Grey 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 441 KB

The excitonic properties in two (Ill)B-grown lno.lsGao.ssAs/GaAs multiple quantum well p-i-n diodes are investigated by thermally-detected optical absorption and electroreflectance measurements. The lineshape of the electroreflectance spectra is analysed by means of a multilayer model enabling the e