Optical investigation of piezoelectric field effects on excitonic properties in (111)B-grown (In, Ga)As/GaAs quantum wells

✍ Scribed by P. Ballet; P. Disseix; A. Vasson; A.-. Vasson; R. Grey

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 441 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00111-5

✦ Synopsis

The excitonic properties in two (Ill)B-grown lno.lsGao.ssAs/GaAs multiple quantum well p-i-n diodes are investigated by thermally-detected optical absorption and electroreflectance measurements. The lineshape of the electroreflectance spectra is analysed by means of a multilayer model enabling the energies and the oscillator strengths ofexcitonic transitions to be deduced. The excitonic characteristic values are calculated by using a variational method. The determination of the variation of the binding energy with in-well field leads to an accurate value of the piezoelectric field in the lnGaAs layers. The theoretical oscillator strengths are compared to those obtained *Corresponding author.

from electroreflectance for different excitonic transitions.