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Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells

✍ Scribed by Ji, G.; Huang, D.; Reddy, U. K.; Henderson, T. S.; Houdre, R.; Morkoc, H.


Book ID
118230484
Publisher
American Institute of Physics
Year
1987
Tongue
English
Weight
761 KB
Volume
62
Category
Article
ISSN
0021-8979

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Optical investigations of strained InGaA
✍ G. Sek; M. Ciorga; J. Misiewicz; D. Radziewicz; R. Korbutowicz; M. Panek; M. Tła 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 92 KB 👁 1 views

InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy-and lighthole excitonic transiti