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Resonant acceptor states in Ge/Ge1-xSix MQW heterostructures

โœ Scribed by Aleshkin, V Ya; Andreev, B A; Gavrilenko, V I; Erofeeva, I V; Kozlov, D V; Kuznetsov, O A


Book ID
115536316
Publisher
Institute of Physics
Year
2000
Tongue
English
Weight
167 KB
Volume
11
Category
Article
ISSN
0957-4484

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We investigate the Quantum Hall Effect (QHE) in selectively boron-doped \(\mathrm{GeSi} /(111) \mathrm{Ge}\) multi-quantum well (MQW) samples of non standard geometry with six-point contacts disconnected from the sample edges. The Hall resistance shows a well-pronounced quantisation that is consiste