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Defect formation in Ge1−xSix/Ge(111) epitaxial heterostructures

✍ Scribed by T. G. Yugova; M. G. Mil’vidskii; V. I. Vdovin


Book ID
110139713
Publisher
SP MAIK Nauka/Interperiodica
Year
2004
Tongue
English
Weight
408 KB
Volume
46
Category
Article
ISSN
1063-7834

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Quantum hall effect in Ge1-XSiX/(111)Ge
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We investigate the Quantum Hall Effect (QHE) in selectively boron-doped \(\mathrm{GeSi} /(111) \mathrm{Ge}\) multi-quantum well (MQW) samples of non standard geometry with six-point contacts disconnected from the sample edges. The Hall resistance shows a well-pronounced quantisation that is consiste