Resonances in partially inhomogeneous bodies of revolution: VIE/SIE analysis

✍ Scribed by Andrzej A. Kucharski

• Publisher: John Wiley and Sons
• Year: 2004
• Tongue: English
• Weight: 225 KB
• Volume: 44
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.20551

✦ Synopsis

mately 2.2% and the bandpass insertion loss is about 1.5 dB, which is higher than the simulated value. The loss is mainly due to circuit loss, including conductor, dielectric, and radiation losses in conjunction with the loss of the SMA-connector-to-microstrip transitions. The return loss is better than 12 dB within the passband; in addition, good suppression levels are realized in both the upper and lower stopbands. Although there is some slight discrepancy between the simulated and measured results due to the fabrication tolerances and the nonideal situation of the experimental medium (since the filter was measured in the open), the simulation and experimental results are in close agreement.

5. CONCLUSION

A novel resonant element using a slotted ring resonator together with a stepped impedance resonator (SIR) has been presented. By formulating the properties of the structure, a bandpass filter at the center frequency of 5.0 GHz has been designed and fabricated to demonstrate the application of the proposed configuration for designing compact, high-performance microstrip filters. Both the theoretical and experimental performances of the filter have been investigated with good agreement. The filter is believed to be quite attractive for further development toward applications in modern wireless-communication systems.