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Resistivity and the Hall effect in polycrystalline Ni-Cu and Ta-Cu multi-layered thin films

✍ Scribed by Reiss, G; Kapfberger, K; Meier, G; Vancea, J; Hoffmann, H

Book ID
121185386
Publisher
Institute of Physics
Year
1989
Tongue
English
Weight
582 KB
Volume
1
Category
Article
ISSN
0953-8984

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Pure Cu and Cu(Fe) thin films containing ~0.1 and ~1.0 at % Fe were prepared by low-temperature deposition onto a liquid-helium-cooled substrate. The Cu (Fe ) films were annealed sequentially at approximately 17, 70, and 270 K. After each annealing stage the resistivity was measured down to ~l.5 K.