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Effects of C+ implantation on the interdiffusion and resistivity of Cu/Ni/Au thin films

✍ Scribed by Madakson, Peter; Karasinski, J.

Book ID
126482332
Publisher
American Institute of Physics
Year
1990
Tongue
English
Weight
740 KB
Volume
67
Category
Article
ISSN
0021-8979

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Pure Cu and Cu(Fe) thin films containing ~0.1 and ~1.0 at % Fe were prepared by low-temperature deposition onto a liquid-helium-cooled substrate. The Cu (Fe ) films were annealed sequentially at approximately 17, 70, and 270 K. After each annealing stage the resistivity was measured down to ~l.5 K.