𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of annealing on the resistivity of quench-condensed Cu and Cu(Fe) thin films

✍ Scribed by P. J. Silvėrman; C. V. Briscoe

Publisher
Springer US
Year
1978
Tongue
English
Weight
295 KB
Volume
30
Category
Article
ISSN
0022-2291

No coin nor oath required. For personal study only.

✦ Synopsis

Pure Cu and Cu(Fe) thin films containing ~0.1 and ~1.0 at % Fe were prepared by low-temperature deposition onto a liquid-helium-cooled substrate. The Cu (Fe ) films were annealed sequentially at approximately 17, 70, and 270 K. After each annealing stage the resistivity was measured down to ~l.5 K. The Cu(Fe) films exhibited a region in which the resistivity was proportional to In T; in this region the logarithmic slope of the resistivity curve was only weakly affected by annealing. Below ~ 10 K annealing produced a significant decrease in the impurity (Fe) contribution to the resistivity. The results are interpreted as due to increased interactions between Fe atoms produced by an increase in conduction-electron mean free path.

📜 SIMILAR VOLUMES

Effects of post-annealing on (110) Cu2O
Effects of post-annealing on (110) Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor
✍ Matsuzaki, Kosuke ;Nomura, Kenji ;Yanagi, Hiroshi ;Kamiya, Toshio ;Hirano, Masah 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 687 KB

## Abstract We grew epitaxial (110) Cu~2~O films on (110) MgO substrates toward high‐mobility __p__‐channel oxide thin‐film transistors (TFTs). The (110) Cu~2~O films exhibited high Hall mobilities ∼90 cm^2^(Vs)^−1^ comparable to those of high‐quality single‐crystals, which were obtained in a narro

Effect of annealing on the mechanical be
Effect of annealing on the mechanical behaviour of Au/Cu and Cu/Au bilayers on silicon
✍ D. Chocyk; A. Prószyński; G. Gladyszewski 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 363 KB

## Abstract The realtime evolution of stress during deposition of Cu/Au and Au/Cu bilayers was studied by an in‐situ curvature measurement optical technique and annealing in the temperature range from room temperature to 400 °C. The Au/Cu and Cu/Au bilayers attached to silicon substrate with total