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Resistance formation mechanisms for contacts to n -GaN and n -AlN with high dislocation density

✍ Scribed by Sachenko, A. V.; Belyaev, A. E.; Boltovets, N. S.; Zhilyaev, Yu. V.; Klad'ko, V. P.; Konakova, R. V.; Kudryk, Ya. Ya.; Panteleev, V. N.; Sheremet, V. N.

Book ID: 119940568
Publisher: John Wiley and Sons
Year: 2013
Tongue: English
Weight: 385 KB
Volume: 10
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201200530

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