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Research on the band-gap of InN grown on silicon substrates

✍ Scribed by Hongling Xiao; Xiaoliang Wang; Junxi Wang; Nanhong Zhang; Hongxin Liu; Yiping Zeng; Jinmin Li

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
164 KB
Volume
3
Category
Article
ISSN
1862-6351

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Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow Sn x Ge 1 2 x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x ΒΌ 0:2 were obtained. The optical properties provide evidence