Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substrates
✍ Scribed by Matthew R. Bauer; John Tolle; Corey Bungay; Andrew V.G. Chizmeshya; David J. Smith; José Menéndez; John Kouvetakis
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 597 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0038-1098
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✦ Synopsis
Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow Sn x Ge 1 2 x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x ¼ 0:2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap E 0 is reduced to a value as low as 0.41 eV for Sn 0.14 Ge 0.86 . The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si.