Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films From a Tetramethyldisilazane Source. Part 2: Compositional and Structural Dependencies of Film Properties

✍ Scribed by A. M. Wrobel; I. Blaszczyk-Lezak

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 346 KB
• Volume: 13
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200706587

✦ Synopsis

Abstract

The silicon carbonitride (Si:C:N) films produced by hydrogen remote microwave plasma (RP)CVD from a 1,1,3,3‐tetramethyldisilazane precursor at various substrate temperatures (35–400 °C) are examined in terms of their physical (density), optical (refractive index), and mechanical (hardness, elastic modulus, friction coefficient) properties. The films' resistance to wear is predicted from the slope of the hardness/elastic modulus plot. Reasonable correlations between the properties of Si:C:N films and their compositional parameters (expressed by the atomic ratios C/Si, N/Si, and N/C) as well as structural parameters (represented by the relative integrated intensities of the absorption infrared (IR) bands from the Si–C and Si–N bonds) are found to exist. The effect of Si:C:N film coating on the surface mechanical properties of carbon steel and stainless steel is investigated.