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Reliability problems of submicron MOS transistors and circuits

โœ Scribed by Wolfgang H. Krautschneider; Hartmud Terletzki; Qin Wang


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
827 KB
Volume
32
Category
Article
ISSN
0026-2714

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## Abstract The modeling of MOS transistors used for RF applications needs the definition of a lumped equivalent circuit where the intrinsic device and series extrinsic resistances are properly evaluated. The model accuracy depends on the extraction precision of each intrinsic lumped element. In or